Device manufacturing

Manufacturing of GaN devices using D-mode/E-mode process

GaN increase type, depletion type

Enhanced nitrogen doped pGaN

GaN and Aluminum+Nitrogen AI GaN Process Design

Lattice stress

Fermi level energy groove

Manufacturing of High Electron Mobility GaN Switch Tube

Process manufacturing of GaN HEMT and MOS

GaN HEMT is based on AlGaN/GaN heterojunction, using Si or SiC as hetero substrates to manufacture MOS and GaN HEMTs

MOS material

Incremental MOS

Depletion type MOS

GaN material

Incremental GaN

Depleted GaN