GaN increase type, depletion type
Enhanced nitrogen doped pGaN
GaN and Aluminum+Nitrogen AI GaN Process Design
Lattice stress
Fermi level energy groove
Manufacturing of High Electron Mobility GaN Switch Tube
GaN HEMT is based on AlGaN/GaN heterojunction, using Si or SiC as hetero substrates to manufacture MOS and GaN HEMTs
MOS material
Incremental MOS
Depletion type MOS
GaN material
Incremental GaN
Depleted GaN