Fourth generation semiconductor materials
Growth of AlN Crystals by PVT Method
AlN engineering composite substrate or diamond can be used as a substrate to manufacture AlGaN/GaN high-frequency high-power power electronic devices, improving the device's heat dissipation capability.
Single crystal diamond substrate assembled by splicing
4-inch gallium oxide wafers and rods
Can be used to manufacture high-power electronic devices and deep ultraviolet photodetectors.
New Display Materials
micro LED
Micro LED, A high-precision current mirror mirror display transparent lens chip with InGaN thin film less than 15 μ m based on AI2O3 substrate material has been developed. This technology has the characteristics of high brightness, high contrast, high resolution, long lifespan, and low power consumption. The external quantum efficiency (EQE) can reach up to 6%, and is applied to VR and AR glasses.
Industrialization of Sapphire Crystal Growth
Encapsulation of high thermal conductivity materials
Research and Industrialization of Alumina Based Technology
AlNi engineering composite substrate
High purity gallium purification technology
Gallium metal high-purity gallium purification technology
High purity gallium purification technology, gallium crystallization purification equipment, gallium crystallization system, multifunctional controller, and standardized operating procedures.
